Samsung now producing DDR 2.0 NAND flash, touts 3X performance gain
Samsung Electronics announced that it is now producing high-performance DDR 2.0 multi-level-cell (MLC) memory chips based on its smallest 20-nanometer (nm) circuitry. The chips boast a performance improvement of three times over the company's current chip technology and have 64 gigabits of capacity, twice what Samsung had been producing with DDR 1.0 technology.